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Sensors » ITR9809-F
 
ITR9809-F   Technical Specifications 
  • Fast response time   
  • High analytic
  • Cut-off visible wavelength =940nm
  • High sensitivity 
  • Pb free
  • This product itself will remain within RoHS compliant version.

Description:

The ITR9809-F/T consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic  housing . The phototransistor receives radiation from the IRED only .This is the normal situation. But when an object is in between , phototransistor could not receives the Radiation. For additional component information , please refer to IR928-6C-F and PT928-6C-F

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