• Fast response time.

• High analytic.

• Cut-off visible wavelength: λp=840nm.

• High Sensitivity.

Description:

The ITR-9909 consist of an Infrared emitting diode and an NPN silicon Photo transistor,encased side by side on converging optical axis in a black thermoplastic housing. The Photo transistor receives radiation from the IRED only.This is the normal situation,but when an object is in between photo transistor could not receives the radiation ,For Additional Component information, please refer to IR 1254-R8 and PT1254-6B.